Surface acoustic wave device and substrate thereof

Details Surface acoustic wave device and substrate thereof Surface acoustic wave device and substrate thereof

H - Electricity

03

H

H03H 9/25 (2006.01) H03H 9/02 (2006.01)

Patent

CA 2399412

A substrate of a surface acoustic wave device is provided in which an intermediate layer for controlling the crystal characteristics of a piezoelectric layer is unlikely to separate from a diamond layer. A substrate (20) of a surface acoustic wave device (10) comprises a diamond layer (22), an intermediate layer (24) on the diamond layer (22), and a piezoelectric layer (26) on the intermediate layer (24). The piezoelectric layer (26) is formed of LiNbO3 or LiTaO3, and the intermediate layer (24) is formed of AlN.

L'invention porte sur le substrat d'un dispositif à onde acoustique de surface comportant une couche intermédiaire de contrôle des caractéristiques de la couche piézo-électrique, peu susceptible de se séparer de la couche de diamant. Un tel substrat (20) comporte une couche de diamant (22) une couche intermédiaire (24) disposée sur la couche de diamant (22), et une couche piézo-électrique (26) disposée sur la couche intermédiaire (24), la couche piézo-électrique (26) étant faite de LiNbO¿3? ou de LiTaO¿3?, et la couche intermédiaire (24), d'AlN.

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