Surface-channel ccd image sensor with buried-channel output...

G - Physics – 11 – C

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G11C 11/40 (2006.01) H01L 27/148 (2006.01)

Patent

CA 1090453

Abstract of the Disclosure A charge-coupled device (CCD) imager of the field-transfer type comprises CCD registers A, B and C. The A register is a surface channel type and includes a substrate formed with channels extending in a column direction, the opposite edges of each channel being defined by potential barriers in the substrate for confining any charge which may be present in a channel to the channel. The A register also has electrodes extending in a row direction, i.e. substantially orthogonal to the column direction, over the channels. The A register is responsive to voltages applied to the electrodes for the storage in and transfer of charges along the channels. In the contemplated register arrangement, the A register produces and stores charge signals in response to a radiation image projected onto the A register. The B register is coupled to the A register in a manner to allow a field of charge signals to be shifted from the A register into the B register for temporary storage. The B register includes a substrate formed with channels aligned with corresponding channels of the A register, the opposite edges of each B register channel (like the A register channels ) being defined by potential barriers in the substrate which confine any charge which may be present in a channel to that channel. The B register also has electrodes which extend in the row direction over the B register channels, so that the B register is responsive to voltages applied to its Abstract continued. electrodes for the storage in and transfer of charge along the B register channels. The C register is a buried channel type and includes a semiconductor formed with a channel extending in the above mentioned row direction and having opposite edge regions defined in the semiconductor by potential barriers, which also extend in the row direction and which confine any charge which may be present in the C register channel to that channel. The C register channel comprises a semiconductor surface layer of one conductivity type over a semiconductor of opposite is coupled to the channels of the B register for receiving charge signals, in parallel, a row at a time, from the B register. The C register also includes electrodes extending in the above mentioned column direction over its channel for the storage in and transfer of charge along the channel of the C register.

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