Surface emitting semiconductor laser

Details Surface emitting semiconductor laser Surface emitting semiconductor laser

H - Electricity

01

S

H01S 5/183 (2006.01)

Patent

CA 2232585

Two semiconductive layers of this laser form a tunnel junction which allows an electric current for pumping the laser to go from a semiconducting Bragg reflector for N-doping (20) to an injection layer for P-doping (16) belonging to the light amplification structure (12, 14, 16). The Bragg reflector operates in conjunction with another reflector of the same type for the same doping (18) to include this structure in an optical cavity of the laser. As a variation, the tunnel junction can be buried and located so as to constitute a means of confinement for the said pumping current. The laser is usable in an optical fibre communication network.

Deux couches semiconductrices de ce laser forment une jonction tunnel qui permet à un courant électrique assurant le pompage de ce laser de passer d'un miroir de Bragg semiconducteur à dopage N (20) à une couche d'injection à dopage P (16) appartenant à la structure amplificatrice de lumière (12,14,16). Ce miroir de Bragg coopère avec un autre miroir du même type ayant le même dopage (18) pour inclure cette structure dans une cavité optique de ce laser. En variante la jonction tunnel peut être enterrée et localisée de manière à constituer un moyen de confinement pour ledit courant de pompage. Ce laser est utilisable dans un réseau de communication à fibres optiques.

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