Surface-emitting semiconductor laser

Details Surface-emitting semiconductor laser Surface-emitting semiconductor laser

H - Electricity

01

S

H01S 5/183 (2006.01) H01S 5/02 (2006.01) H01S 5/024 (2006.01) H01S 5/042 (2006.01)

Patent

CA 2438341

The invention relates to a surface-emitting type semiconductor laser. The invention aims at providing a semiconductor laser that is to be operated under normal ambient temperatures and that has a stable long-term behavior. To this end, said semiconductor laser comprises an active zone having a pn junction; a first n-doped semiconductor layer on the n side of the active zone; a structured tunnel contact on the p side of the active zone, which forms a conductive junction to a second n-doped semiconductor layer on the p side of the active zone; a structured dielectric mirror that is placed on the second n- doped semiconductor layer; a contact layer establishing contact to the second n-doped semiconductor layer at the site in which the dielectric mirror is not located, and a diffusion barrier between the contact layer and the second n- doped semiconductor layer.

L'invention concerne un laser semi-conducteur du type à émission par la surface. L'objectif de l'invention est de produire un laser semi-conducteur de ce type fonctionnant à des températures ambiantes normales et présentant un comportement à long terme stable. A cet effet, le laser semi-conducteur selon l'invention comprend une zone active à jonction PN, une première couche semi-conductrice dopée N du côté N de la zone active, un contact tunnel structuré du côté P de la zone active, ce contact formant une jonction conductrice avec une seconde couche semi-conductrice dopée N du côté P de la zone active, un miroir diélectrique structuré placé sur la seconde couche semi-conductrice dopée N, une couche de contact établissant un contact avec la seconde couche semi-conductrice dopée N à l'endroit où ne se trouve pas le miroir diélectrique, ainsi qu'une barrière de diffusion entre la couche de contact et la seconde couche semi-conductrice dopée N.

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