H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/183 (2006.01) G02F 1/21 (2006.01) H01L 33/00 (2006.01) H01S 3/085 (1995.01)
Patent
CA 2158596
A semiconductor device is provided that includes an optical cavity that is designed to provide a prescribed resonant optical wavelength. The optical cavityincludes a mirror structure deposited on top of a substrate and a multi-layer region such as an electroabsorptive region, for example, deposited over the mirror structure. A partial antireflective coating is deposited over the multi-layer region. The mirror structure and the multilayer region have a thickness variation sufficient to yield a resonant optical wavelength that deviates from the prescribed resonant wavelength. The partial antireflective coating has a non-uniform thickness variation that causes the resonant optical wavelength to shift substantially toward the prescribed resonant optical wavelength.
Cunningham John Edward
Goossen Keith Wayne
At&t Corp.
Kirby Eades Gale Baker
LandOfFree
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