Surface treatment for silicon carbide

Details Surface treatment for silicon carbide Surface treatment for silicon carbide

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B32B 9/04 (2006.01) B32B 7/02 (2006.01) C04B 41/45 (2006.01) C04B 41/81 (2006.01) C23C 16/32 (2006.01) D06M 11/00 (2006.01) H05B 6/78 (2006.01)

Patent

CA 1175308

ABSTRACT OF THE DISCLOSURE The invention relates to a surface treatment for stoichiometric silicon carbide. A carbon-rich silicon carbide layer is applied over the silicon carbide. In the case of the silicon carbide surface, the ratio of silicon to carbon in the carbon-rich layer varies from one at the silicon carbide interface to near zero in the interior of the carbon-rich layer to greater than zero and preferably .3 to .5 on the surface of the carbon-rich layer remote from the interface. A pre- ferred method of making the silicon carbide layer is also presented.

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