Surface treatment for silicon substrates

Details Surface treatment for silicon substrates Surface treatment for silicon substrates

C - Chemistry, Metallurgy

30

B

C30B 25/10 (2006.01) H01L 21/306 (2006.01)

Patent

CA 2147401

A method for desorbing the surface oxide on a silicon substrate is performed by implanting particles such at atomic or ionic hydrogen into the oxide layer on the silicon substrate. The oxide is then removed by breaking the bonds between the silicon and oxygen atoms within the oxide. The bonds may be broken by heating the substrate, for example. The temperature to which the substrate must be raised is substantially less than the temperature required to desorb an oxide layer that has not undergone an implantation step. In one particular example, the particles implanted into the oxide surface are hydrogen ions generated by electron cyclotron resonance.

Divulgation d'une méthode pour désorber l'oxyde superficiel d'un substrat de silicium consistant à implanter des particules, comme de l'hydrogène atomique ou ionique, dans la couche d'oxyde se trouvant sur le substrat de silicium. L'oxyde est ensuite éliminé en provoquant la rupture des liaisons existant dans l'oxyde entre les atomes de silicium et d'oxygène. On peut, par exemple, provoquer la rupture des liaisons en chauffant le substrat. La température à laquelle le substrat doit être porté est nettement inférieure à la température requise pour désorber une couche d'oxyde qui n'aurait pas subi l'étape d'implantation. Dans une application particulière, les particules implantées dans la surface d'oxyde sont des ions hydrogène produits par résonance cyclotronique d'électrons.

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