G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.3
G11C 11/24 (2006.01) G11C 11/40 (2006.01) G11C 11/403 (2006.01) G11C 14/00 (2006.01) G11C 16/04 (2006.01)
Patent
CA 1046641
Title of the Invention A SWITCHED CAPACITOR NON-VOLATILE MNOS RANDOM ACCESS MEMORY CELL Abstract of the Invention: A random access memory cell comprises three capacitance means and three field effect transistors. One capacitance means is a pseudo-transistor which is embodied in the cell to principally provide means for refreshing the cell. One transistor has an alterable threshold and is em- bodied in the cell to store information at "power down".
232803
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