Synthetic diamond heat sink

Details Synthetic diamond heat sink Synthetic diamond heat sink

C - Chemistry, Metallurgy

30

B

356/113, 148/3.6

C30B 29/04 (2006.01) B01J 3/06 (2006.01) H01L 23/36 (2006.01) H01L 23/373 (2006.01)

Patent

CA 1227726

ABSTRACT OF THE DISCLOSURE A synthetic diamond heat sink which can be easily shaped and which ensures a consistently high thermal conductivity in which the diamond is a Type Ib diamond containing 5 to 100 ppm nitrogen. The synthetic diamond crystal has a shape similar to the crystal structure of a hexahedron synthesized by heating a carbon source, a solvent and a diamond seed crystal and the stability region of diamond at a high pressure. The resulting temperature gradient between the carbon source and seed crystal is adjusted to cause diamond growth on the seed crystal. The solvent employed is selected from the group of cobalt, nickel, iron, chromium and manganese. The diamond crystal is caused to grow as the temperature of the solvent is gradually decreased at a rate of 0.15 to 10°C per hour so that the temperature of the seed crystal and growing diamond crystal is within a range the lower limit of which is a temperature 20°C higher than the melting point of the solvent and carbon source system and the upper limit of which is a temperature 40°C higher than the lower limit.

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