C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/34 (2006.01) C23C 14/04 (2006.01) C23C 14/54 (2006.01) C23C 16/00 (2006.01) G02B 1/10 (2006.01)
Patent
CA 2479702
A system and method for manufacturing thin-film structures disposed on a substrate(14). The thin-film structures have different respective thicknesses that vary along a radius of the substrate (14). A substrate (14) rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask (20) having a stepped profile is positioned between the rotating substrate (14) and the source. The stepped mask (20) selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask (20) corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate.
L'invention concerne un système et un procédé de fabrication de structures de film mince disposées sur un substrat (14). Les structures de film mince possèdent différentes épaisseurs qui varient en fonction d'un rayon du substrat (14). Un substrat (14) tourne autour d'un axe de rotation, et une source de matière de dépot est dirigée sur le substrat en rotation. Un masque (20) présentant un profil étagé est positionné entre le substrat en rotation (14) et la source. Le masque étagé (20) bloque de manière sélective la matière émanant de la source de sorte à empêcher que la matière n'atteigne le substrat. Chaque étage du profil du masque (20) correspond à l'épaisseur d'une structure de film mince correspondant. Le rayon, le long duquel les différentes épaisseurs de structure de film mince varient, est mesuré à partir de l'axe de rotation du substrat en rotation.
Baldwin David Alan
Hylton Todd Lanier
4wave Inc.
Borden Ladner Gervais Llp
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