System and method of selectively applying negative voltage...

Details System and method of selectively applying negative voltage... System and method of selectively applying negative voltage...

G - Physics

11

C

G11C 11/16 (2006.01)

Patent

CA 2711671

Systems and methods of selectively applying negative voltage to word lines during memory device read operation are disclosed. In an embodiment, a memory device (100) includes a word line logic circuit (110) coupled to a plurality of word lines (108) and adapted to selectively apply a positive voltage (V) to a selected word line coupled to a selected memory cell that includes a magnetic tunnel junction (MTJ) device and to apply a negative voltage (NV) to unselected word lines.

L'invention concerne des systèmes et des procédés d'application sélective d'une tension négative à des lignes de mots pendant une opération de lecture d'un dispositif de mémoire. Dans un mode de réalisation, un dispositif de mémoire (100) comprend un circuit logique de ligne de mots couplé à une pluralité de lignes de mots (108) et conçu pour appliquer sélectivement une tension positive (V) à une ligne de mots sélectionnée couplée à une cellule mémoire sélectionnée qui comprend un dispositif à jonction de tunnel magnétique (MTJ), et pour appliquer une tension négative (NV) à des lignes de mots non sélectionnées.

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