C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/3.5
C30B 35/00 (2006.01) C23C 16/509 (2006.01) C23C 16/54 (2006.01)
Patent
CA 1205363
SYSTEM INCLUDING IMPROVED CATHODE FOR CONTINUOUS DEPOSITION OF AMORPHOUS MATERIAL ABSTRACT OF THE DISCLOSURE A continuous system for depositing at least one layer of amorphous semiconductor material upon a sub- strate. Feed and takeup reels advance a thin film substrate through the system. At least one chamber is located intermediate the feed and takeup reels wherein a plasma is generated by the glow discharge of a reaction gas mixture. Apparatus associated with the chamber provides close regulation of plasma/substrate surface equilibrium to assure that a uniform layer of amorphous material is deposited. A chamber cathode, including a top surface electrode is adapted to provide a substanti- ally uniform distribution of reaction gas during deposi- tion by means of a plurality of baffles that equalizes path lengths from a reaction gas source to the electrode and from the electrode to a vacuum chamber. The elec- trode is electrically insulated from a plurality of gas exits to confine the plasma to the region between the electrode and the active surface of the substrate. Additional subsystems include a servo-controlled reel drive to regulate substrate tension and an inert gas curtain to isolate the interior of the chamber.
397385
Izu Masatsugu
Ovshinsky Herbert C.
Energy Conversion Devices Inc.
Gowling Lafleur Henderson Llp
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