Tailoring of recovery charge in power diodes and thyristors...

H - Electricity – 01 – L

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H01L 21/26 (2006.01) H01L 21/263 (2006.01) H01L 29/32 (2006.01) H01L 29/74 (2006.01) H01L 29/861 (2006.01)

Patent

CA 1085963

TAILORING OF RECOVERY CHARGE IN POWER DIODES AND THYRISTORS BY IRRADIATION ABSTRACT OF THE DISCLOSURE The recovery charge of power diodes and thyristors is tailored and matched by irradiation through a major surface of the semiconductor body with a given radiation source, preferably of electron radiation, to a dosage corresponding to between about 1 x 1012 and 8 x 1012 electrons per centimeter square with 2 MeV electron radiation. Preferably, the recovery charge of each device of a group of a type of diode or thyristor is first measured, and the group divided into subgroups according to the measured recovery charge of each device. The devices of at least one subgroup is then irradiated with said given radiation source to dosages corresponding to between about 1 x 1012 and 8 x 1012 electrons per centimeter square with 2 MeV electron radiation, and the recovery charge of each irradiated device is again measured to determine the incremental change of recovery charge as a function of irradiation dosage. A recovery charge of another device of said type of diode or thyristor is then measured, and the device irradiated with said radiation source to a determined dosage corresponding to a desired incremental change in recovery charge to tailor the recovery charge of said device to a desired value. -1-

276540

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