Tantalum semiconductor contacts and method for fabricating same

Details Tantalum semiconductor contacts and method for fabricating same Tantalum semiconductor contacts and method for fabricating same

H - Electricity

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H01L 29/18 (2006.01) H01L 21/285 (2006.01) H01L 21/338 (2006.01) H01L 23/532 (2006.01) H01L 29/45 (2006.01) H01L 29/47 (2006.01)

Patent

CA 1111570

TANTALUM SEMICONDUCTOR CONTACTS AND METHOD FOR FABRICATING SAME Abstract of the Disclosure A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.

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