Tantalum-silicon and niobium-silicon substrates for...

C - Chemistry – Metallurgy – 22 – C

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C22C 27/02 (2006.01) C22C 1/05 (2006.01) C22C 29/16 (2006.01) H01G 9/052 (2006.01)

Patent

CA 2438246

The allows: Ta-Si, Nb-Si, TaN-Si, NbN-Si and variants are used as enhanced powder anode substrates for electrolytic capacitor anodes (sintered powder masses) with dielectric oxide formation at walls of the internal pores.

Selon l'invention, Ta-Si, Nb-Si, TaN-Si, NbN-Si et des variants sont utilisés comme substrats d'anode en poudre améliorés destinés à des anodes de condensateurs électrolytiques (masses poudreuses frittées) avec formation d'oxyde diélectrique au niveau des parois des pores intérieurs.

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