H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/50 (2006.01) H01S 5/10 (2006.01) H01S 3/18 (1990.01)
Patent
CA 2128204
A semiconductor laser gain structure having a tapered gain region (31) comprising cavity spoilers (48, 50) for receiving light which is reflected off of the output facet (38) back into the semiconductor and removing it from the gain region (31) so as to reduce or eliminate self-oscillation. The boundaries of the gain region (31) are also designed to have a very low refractive index gradient so as to minimize reflection of light off of the boundaries back imo the gain region (31). The gain structure (33) may be embodied in a semiconductor laser oscillator or semiconductor laser amplifier depending on whether the input facet (34) is or is not, respectively, anti-reflection coated. The output facet (38) is anti- reflection coated in either embodiment.
Chinn Stephen R.
Kintzer Emily S.
Missaggia Leo J.
Walpole James N.
Wang Christine A.
Massachusetts Institute Of Technology
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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