Targets for cathode sputtering

Details Targets for cathode sputtering Targets for cathode sputtering

C - Chemistry, Metallurgy

23

C

204/96.03, 204/1

C23C 14/08 (2006.01) C23C 14/34 (2006.01)

Patent

CA 1222217

"TARGETS FOR CATHODE SPUTTERING" ABSTRACT OF THE DISCLOSURE Oxide-ceramic targets which can be used in magnet- ically enhanced cathode sputtering and which are based on hot-pressed indium oxide/tin oxide mixtures, which have a density of at least 75% of the theoretical density and which have been diminished to such an extent in the oxygen content compared with the stoichio- metric composition that they have an electrical conduc- tivity which corresponds to a specific resistance of 0.6 to 0.1 .OMEGA.. cm can be prepared by compression- molding the metal oxide mixture in a reducing atmosphere under a pressure of 50 to 600 kg/cm2 and at a temperature of 850 to 1,000°C. The targets can be used in direct-voltage sputtering.

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