Technique for doping from a polysilicon transfer layer

Details Technique for doping from a polysilicon transfer layer Technique for doping from a polysilicon transfer layer

H - Electricity

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H01L 21/36 (2006.01) H01L 21/225 (2006.01) H01L 21/762 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1230431

- 10 - Abstract For trench isolation technology or trench capacitor type memory cells it is necessary to controllably dope the steep sidewalls of the trench. Implantation is ineffective and chemical doping sacrifices control. A thin transfer layer of polysilicon is deposited in the trench to conformally coat the sidewalls as well as the bottom of the trench and the top surface surrounding the trench. An impurity is implanted into the polysilicon at the bottom of the trench and around the top surface. Upon heating that impurity diffuses rapidly along the polysilicon layer upwardly and downwardly along the sidewalls. It then may be diffused into the substrate. The polysilicon layer may be etched away, or may be oxidized to SiO2 and etched away, or left in place.

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