Technique for fabricating complementary dielectrically...

Details Technique for fabricating complementary dielectrically... Technique for fabricating complementary dielectrically...

H - Electricity

01

L

356/147

H01L 21/76 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1297210

Technique For Fabricating Complementary Dielectrically Isolated Wafer Abstract A method has been developed for providing tub regions with various resistivities in a dielectrically isolated (DI) structure. The starting substrate material is etched to expose the locations designated for a resistivity modification, and epitaxial material of the modified resistivity value is used to fill the exposed tubs. The remainder of the fabrication process follows conventional DI fabrication techniques. The procedure may simply be used to create a DI structure containingboth n-type and p-type tub regions. The idea may also be extended, however, to providing separate tubs with, for example, n+ resistivity, n- resistivity, p- resistivity and p+ resistivity, all within the same DI structure.

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