Technique for programming junction-programmable read- only...

Details Technique for programming junction-programmable read- only... Technique for programming junction-programmable read- only...

G - Physics

11

C

356/197, 356/66,

G11C 7/00 (2006.01) G11C 17/00 (2006.01) G11C 17/16 (2006.01) H01L 27/102 (2006.01)

Patent

CA 1193009

METHOD OF PROGRAMMING OF JUNCTION-PROGRAMMABLE READ-ONLY MEMORIES Fu C. Chong ABSTRACT A method of programming a cell in a PROM, wherein the cell comprises a bipolar transistor having a floating base, comprises applying a current rising with time across the emitter to collector contacts of the bipolar transistor with the collector contact serving as the reference potential, measuring the time at which the rise in voltage suddenly stops and the voltage drops a small amount, and then holding the current for a selected time following the voltage drop, thereby to insure that the emitter base junction of the bipolar transistor is destroyed while at the same time not damaging the base collector junction of the bipolar transistor.

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