H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/77 (2006.01) B41J 2/45 (2006.01) H01L 21/22 (2006.01) H01L 27/15 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2390485
A method of fabricating high resolution, light emitting devices for printheads and the like is disclosed. An epitaxial layer of an alloy compound such as GaAs:P is used as the host material. Typically, p-type material is diffused into n- type material to form planar and isolated p-n junctions that provide individual light emitting pixels. In the method of this invention the shape of each pixel and the gap between pixels is controlled by tailoring the dimensions of the aperture through which thermal diffusion takes place and by providing a layer of modulation material over the diffusion aperture. This combination results in the control of lateral diffusion parameters such that both the shape of the pixels and the gap between can be controlled.
Kennedy David I.
Wareberg P. Gunnar
Wilson Stephen E.
Woodfield Richard
Marks & Clerk
Optotek Ltd.
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