H - Electricity – 03 – G
Patent
H - Electricity
03
G
H03G 1/04 (2006.01) H03F 1/30 (2006.01)
Patent
CA 2526811
Compensation for variations in temperature and manufacturing process of a MOSFET operating in its sub-threshold mode. The compensation may include circuitry containing at least a second MOSFET that may also operate in its sub- threshold mode. The operational characteristics of the second MOSFET may be closely matched to those of the first MOSFET, and the second MOSFET may be contained on the same substrate.
L'invention concerne une compensation pour des variations de température et dans un procédé de fabrication d'un MOSFET fonctionnant en mode infraseuil. La compensation peut comprendre un montage de circuits contenant au moins un second MOSFET qui peut également fonctionner en mode infraseuil. Les caractéristiques fonctionnelles du second MOSFET peuvent être étroitement appariées à celles du premier MOSFET, et le second MOSFET peut être contenu sur le même substrat.
Zhang Xuejun Andy
Zhou Jianjun
Qualcomm Incorporated
Smart & Biggar
LandOfFree
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