Temperature-compensated analog voltage memory device

Details Temperature-compensated analog voltage memory device Temperature-compensated analog voltage memory device

G - Physics

11

C

328/144, 352/82.

G11C 11/40 (2006.01) G11C 27/02 (2006.01)

Patent

CA 1091807

ABSTRACT OF THE DISCLOSURE In an analog voltage memory device of the type wherein a gate of a MOS field-effect transistor is connected to one terminal of analog switching means and to one terminal of a nonpolarized capacitor with the other terminal grounded, whereby a DC analog input voltage may be held as a source follower voltage of MOS field-effect transistor, adverse effects on the operation due to the variation in ambient temperature are eliminated by a constant current circuit including a NPN transistor. Variation in output due to the variation in ambient temperature may be minimized indepen- dently of ddrain current of MOS field-effect transistor, and drifts due to variation in ambient temperature of equipment and instruments such as pollution detectors and recorders which are installed outdoors may be reduced to a minimum. This analog voltage memory device is used as peak hold memory, sample-and-hold memory, zero-point memory, etc. and can well hold signals for a long time to achieve a non- volatile memory in spite of no power supply.

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