H - Electricity – 03 – K
Patent
H - Electricity
03
K
328/199
H03K 17/14 (2006.01) H03F 3/45 (2006.01)
Patent
CA 1292289
TEMPERATURE COMPENSATED BIPOLAR CIRCUITS Abstract A temperature compensated ECL gate (20) with each gate circuit resistance formed by a pair of opposite polarity temperature coefficient resistors. A first gate transistor element (Q1) and a second gate transistor element (Q2) coupled at a common emitter coupling (12) provide alternative collector current paths from high potential (Vcc) through a first gate transistor collector path with collector resistance (R11,R12) and a gate transistor collector path with collector resistance (R21,R22). A current source transistor element (Q3) is coupled between the common emitter coupling (12) of the gate transistor elements and low potential (VEE) through current source resistance (R31,R32). The resistances of the ECL gate each include a positive temperature coefficient silicon first resistor (R11,R21,R31) and a negative temperature coefficient low capacitance polysilicon second resistor coupled (R12,R22,R32) in series. The sum of the resistances of the first and second resistors is selected to providing the respective circuit resistance of the ECL gate and the ratio of the resistances of the first and second resistors is selected according to the temperature characteristics of the current source voltage generator and the temperature characteristics of the first and second resistors f or substantial temperature compensation of the gate current and signal voltage swing over a specified temperature range. The temperature compensating pair of opposite polarity temperature coefficient resistors is also applicable for temperature compensation at active nodes of TTL and STL circuits.
605971
Johnson Terry J.
Luk Timwah
Fairchild Semiconductor Corporation
Johnson Terry J.
Luk Timwah
Smart & Biggar
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