Temperature compensated surface acoustic wave devices

Details Temperature compensated surface acoustic wave devices Temperature compensated surface acoustic wave devices

H - Electricity

03

H

356/200, 333/36,

H03H 7/30 (2006.01) H03H 9/02 (2006.01)

Patent

CA 1043432

Abstract A temperature compensated surface acoustic wave device having an SiO2 film layer upon a substrate of piezoelectric material. The positive temperature coefficient of delay of the piezoelectric substrate is counterbalanced by the negative temperature coefficient of the SiO2 layer. The thickness and shape of the SiO2 layer are chosen to give a zero first order temperature coefficient for the composite device. Lithium niobate and lithium tantalate are pre- ferred piezoelectric materials for the substrate. A high degree of temperature stability is thereby obtained with coupling coef- ficients much greater than were previously obtained by prior temperature compensated surface acoustic wave devices.

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