Temperature-stable dielectric material for use at very high...

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H01P 7/10 (2006.01) C04B 35/49 (2006.01) H01B 3/12 (2006.01)

Patent

CA 1150045

A TEMPERATURE-STABLE DIELECTRIC MATERIAL FOR USE AT VERY HIGH FREQUENCY AND A METHOD OF MANUFACTURE OF SAID MATERIAL Abstract of the Disclosure A dielectric material having a high dielectric constant, very low high-frequency losses and very high temperature stability is prepared in particular by sinter- ing previously ground raw materials in an oxidizing atmo- sphere at 1450°C. The molar composition of the raw materials is as follows : t TiO2, x SnO2, y ZrO2, a NiO, b La2O3, where t is between 0.9 and 1.1, x is between 0.1 and 0.4 moles, y is between 0.6 and 0.9, a is between 0.015 and 0.06 moles, b is between 0.01 and 0.1 moles with an addition of iron of 0.0035 mole in respect of one mole of TiO2 obtained, for example, from the use of steel equipment for the grinding operation. When x is in the vicinity of 0.35, the coefficient of thermal varia- tion Tf is reduced to zero and the quality criterion Q.f is high. -1-

371733

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