Temperature stable self-protected thyristor and method of...

Details Temperature stable self-protected thyristor and method of... Temperature stable self-protected thyristor and method of...

H - Electricity

01

L

356/40

H01L 29/74 (2006.01) H01L 21/268 (2006.01)

Patent

CA 1245370

-18- ABSTRACT OF THE DISCLOSURE The present invention is directed to a thyristor which is self-protected against an overvoltage by a cavity formed in an auxiliary gate region. The cavity is formed in the auxiliary gate region by excising material with a laser while monitoring the IV characteristic of the thyristor be- tween the anode emitter and the cathode emitter.

511213

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