Tetramethyltin dopant source for mocvd grown epitaxial...

Details Tetramethyltin dopant source for mocvd grown epitaxial... Tetramethyltin dopant source for mocvd grown epitaxial...

H - Electricity

01

L

356/182

H01L 21/02 (2006.01) C30B 25/02 (2006.01)

Patent

CA 1208812

ABSTRACT A metal-organic transport compound that permits the growth of readily reproducible tin doped or alloyed epitaxial layers is described. In a MOCVD reactor system, a process is performed involving the epitaxial deposition of a layer of a semiconductor material, including a given elemental species, onto a semiconductor substrate maintained within the MOCVD reactor chamber. The elemental species is obtained from the decomposition of a vapor-phase organo-metallic compound consisting essentially of tetramethyltin.

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