Thermal disproportionation of organooxysilanes

Details Thermal disproportionation of organooxysilanes Thermal disproportionation of organooxysilanes

C - Chemistry, Metallurgy

07

F

C07F 7/18 (2006.01) C07F 7/08 (2006.01)

Patent

CA 2082485

THERMAL DISPROPORTIONATION OF ORGANOOXYSILANES ABSTRACT The present invention is a process for the thermal disproportionation of organooxysilanes containing at least one hydrogen, one organooxy and one cyclic substituent all bonded to a single silicon atom, where the cyclic substituent is selected from a group consisting of aryls, substituted aryls, cycloalkyls and substituted cycloalkyls. The process involves heating the organooxysilanes in a liquid phase to a temperature within a range of about 250°C. to 450°C. The present process is particularly useful for the disproportion- ation of phenyldialkoxysilanes to diphenydialkoxysilanes and cycloalkyldialkoxysilanes to dicyclodialkoxysilanes.

Affiliated with

Also associated with

Rating

Thermal disproportionation of organooxysilanes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thermal disproportionation of organooxysilanes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal disproportionation of organooxysilanes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1570555