Thermal gradient control for enhanced laser induced...

Details Thermal gradient control for enhanced laser induced... Thermal gradient control for enhanced laser induced...

H - Electricity

01

L

356/132

H01L 21/20 (2006.01) H01L 21/268 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1157167

-1- ABSTRACT OF THE DISCLOSURE A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, disposed non- epitaxially upon a substrate, into large single crystal areas, by controlling the lateral heat flow out of the melted regions of the areas for causing their recrystallization from a single nucleation site and for suppressing the formation of competitive nucleation sites at their edges.

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