Thermal transfer posts for high density multichip substrates...

H - Electricity – 01 – L

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H01L 23/367 (2006.01) H01L 21/48 (2006.01) H01L 23/433 (2006.01) H05K 1/02 (2006.01) H05K 1/03 (2006.01) H05K 3/00 (2006.01) H05K 3/46 (2006.01)

Patent

CA 2126189

ABSTRACT OF THE DISCLOSURE Thermal post vias are formed within a formed multilayer, high density interconnect including a base and plural layers of metal conductors separated by dielectric material by the steps of: removing in a single step dielectric material at predetermined sites of the thermal post vias to define substantially cylindrical post holes, and forming the thermal post vias by emplacing conductor material, such as metal, into the post holes so that the material fully occupies and fills up the holes.

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