Thermally isolated silicon layer

Details Thermally isolated silicon layer Thermally isolated silicon layer

G - Physics

02

B

G02B 6/12 (2006.01) G02B 6/122 (2006.01) G02F 1/01 (2006.01) G02F 1/225 (2006.01)

Patent

CA 2306187

An integrated optical circuit is formed in a silicon layer and supported on a substrate (5), a portion (1) of the silicon layer is substantially thermally isolated from the substrate (5) by extending over a recess (2) in the substrate (5), e.g. in the form of a bridge. Temperature control means (9) are provided to control the temperature of the said portion (1) of the silicon layer or of a device provided thereon. A thermal expansion gap (1A) may be provided in the said portion (1) to accommodate thermal expansion of the said portion (1) relative to the substrate (5).

L'invention concerne un circuit optique intégré formé dans une couche de silicium et supporté sur un substrat (5), une partie (1) de la couche de silicium est sensiblement isolée thermiquement à partir du substrat (5) étant donné qu'elle se prolonge au-delà d'un évidement (2) dans le substrat (5), par exemple sous forme de pont. Un organe de régulation (9) de température permet de réguler la température de ladite partie (1) de la couche de silicium ou d'un dispositif placé sur celle-ci. Un espace (1A) d'expansion thermique peut être pratiqué dans ladite partie (1) pour supporter l'expansion thermique de ladite partie (1) par rapport au substrat (5).

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