G - Physics – 11 – C
Patent
G - Physics
11
C
352/40
G11C 11/34 (2006.01) G11C 17/00 (2006.01) G11C 17/14 (2006.01)
Patent
CA 1171175
Mo-2157 PC-057 THERMALLY REPROGRAMMABLE MEMORY ARRAY AND A THERMALLY REPROGRAMMABLE MEMORY CELL THEREFOR ABSTRACT OF THE DISCLOSURE An electrically programmable memory cell comprises two terminals, a unidirectional and/or controllable semiconductor device having anode and cathode regions and a programmable resistor, said anode and cathode regions of the semiconductor device and the programmable resistor being connected in series between the terminals. The programmable resistor comprises a mixture of finely divided metallic material dispersed in a thermoplastic resin. The programmable resistor is initially substantially nonconductive (having a resistivity, for example, in excess of 1 mega ohms per cubic cm). By forcing a sufficient current through the terminals for a period of time, the resistance of the programmable resistor drops drastically to the extent that it may be considered a conductor having a resistivity, for example, of less than 100 ohms per cubic cm). The programmable resistor may be returned to its substantially nonconductive condition by heating to a temperature above which the memory cell is normally used and below which the semiconductor device is damaged. The semiconductor device may be a transistor, for example, a field effect transistor, a diode or the like. Mo-2157 PC-057
384708
Hunt Robert N.
Ong George N.
Marcoux & Sher Swabey Mitchell Houle
Mobay Chemical Corporation
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