B - Operations – Transporting – 24 – D
Patent
B - Operations, Transporting
24
D
B24D 3/10 (2006.01) B01J 3/06 (2006.01)
Patent
CA 2077825
60SD00518 THERMALLY STABLE DENSE ELECTRICALLY CONDUCTIVE DIAMOND COMPACTS ABSTRACT OF THE DISCLOSURE Broadly, the present invention is directed to a method for making a thermally stable, dense, electrically conductive diamond compact. The method comprises infiltrating a mass of diamond crystals with a silicon infiltrant in the presence of boron under conditions comprising a temperature of not substantially above 1200°C and a pressure of not substantially above 45 Kbars. The resulting compact contains diamond-to-diamond bonding. The boron can be provided in the form of boron-doped diamond. Alternatively, a boron-silicon alloy can be used for infiltrating boron-doped or undoped diamond. Further, boron can be added as elemental boron or B4C with silicon for infiltration. Alternatively, boron metal catalyst plus silicon infiltration can be used for boron-doped or undoped diamond. Combinations of these techniques also can be used. In the HP/HTprocess, the silicon infiltrates the diamond powder mass forming a network composed of silicon carbide by reaction of the silicon with diamond-carbon. The reaction leaves a sintered body composed of boron-doped diamond or boron compounds with diamond or a network of silicon carbide and silicon.
Company General Electric
Craig Wilson And Company
LandOfFree
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