Thermoelectric alloy and method of manufacturing the same

H - Electricity – 01 – L

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H01L 35/16 (2006.01) C22C 12/00 (2006.01) C22C 28/00 (2006.01) C30B 11/00 (2006.01) F25B 21/02 (2006.01)

Patent

CA 2215861

An n-type thermoelectric alloy from the (Bi2Te3)-(Sb2Te3)-(SbSe3) psuedo-ternary alloy system with the elements Bi and Sb present in an atomic ratio of 21-35:5-19. The n-type alloy has a figure of merit of approximately Z=3.4x 10 -3/K and can be used to create a thermoelectric device which achieves a maximum temperature difference .DELTA.T of 79.2K between the hot and cold junctions of the device. The alloy is grown from the melt into a single crystal using, for example, a vertical Bridgman furnace. The thermoelectric device includes a p-type material and the new n-type material with ohmic contacts placed between the materials and on each end of the device. The ohmic contacts include the elements Bi, Sn, and Sb. In addition, a layer of Ni is applied between the material and the ohmic contact.

Divulgation d'un alliage thermoélectrique de type n du système d'alliages pseudo-ternaires (Bi2Te3)-(Sb2Te3)-(SbSe3), dans lequel les éléments Bi et Sb sont présents dans un rapport atomique de 21-35:5-19. Cet alliage de type n possède un facteur de mérite Z d'environ 3,4 x 10-3/K et peut être utilisé pour la fabrication d'un dispositif thermoélectrique permettant d'obtenir une différence de température maximale, .DELTA.T, de 79,2 K entre ses jonctions chaude et froide. On fait croître un monocristal de cet alliage à partir de la solution fondue en utilisant, par exemple, un four vertical Bridgman. Le dispositif thermoélectrique comprend un matériau de type p, le nouveau matériau de type n et des contacts ohmiques placés entre ces matériaux et à chaque extrémité du dispositif. Les contacts ohmiques contiennent les éléments Bi, Sn et Sb. De plus, un couche de Ni est appliquée entre ce matériau et le contact ohmique.

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