Thin film deposition by sputtering

C - Chemistry – Metallurgy – 23 – C

Patent

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204/167.2

C23C 14/40 (2006.01) C23C 14/35 (2006.01) H01J 37/34 (2006.01)

Patent

CA 1209953

- 9 - ABSTRACT The deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain efficient sputtering of the host material. A vacant center area defined by the plasma region is provided for diode sputtering of the dopant. In RF sputtering, co-excitation of the power source is desired to prevent RF mode beating.

436051

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