Thin film deposition method

Details Thin film deposition method Thin film deposition method

C - Chemistry, Metallurgy

23

C

C23C 16/02 (2006.01) C23C 16/48 (2006.01)

Patent

CA 2264371

A method of depositing, by plasma assisted chemical vapor deposition, an oxygen and water vapor barrier coating atop a temperature sensitive substrate from a precursor gaseous mixture which includes at least a silicon-containing gas and an oxygen-containing gas is provided. The method involves the steps of performing a plasma pretreatment of the low temperature substrate prior to the microwave deposition step, and introducing a sufficient flow rate of oxygen-containing gas into the precursor mixture to eliminate the formation of silicon-hydrogen bonds in the deposited coating.

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