C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/44 (2006.01) C23C 16/22 (2006.01) C23C 16/455 (2006.01) C30B 25/02 (2006.01) C30B 25/16 (2006.01)
Patent
CA 2051554
A thin film deposition method consists of depositing a thin film on a wafer by supplying reactant gas molecules toward and on to the wafer within a vacuum vessel or chamber. The pressure within the vacuum vessel is set to the pressure under which the mean free path (d) of the molecules contained in the supplied reactant gas can be longer than the shortest distance (L) between the wafer and the wall of the vacuum vessel exposed to the vacuum side, or d > L. The temperature of the wafer is set to the temperature (T sub) at which the reactant gas can cause substantially a thermally decomposing reaction. The temperature of the vacuum side-exposed wall of the vacuum vessel (T wall) is set to a temperature range having the lower limit higher than the temperature (T vap) at which the saturated vapor pressure can be maintained to be equal to the partial pressure of the molecules contained in the reactant gas, and having the upper limit lower than the temperature of the wafer (T sub), or T vap < T wall < T sub.
Aketagawa Ken-Ichi
Murakami Shun-Ichi
Murota Hiroyoshi
Sakai Junro
Tatsumi Toru
Anelva Corporation
Corporation Nec
Marks & Clerk
LandOfFree
Thin film deposition method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film deposition method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film deposition method will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-2073788