Thin film deposition method for wafer

Details Thin film deposition method for wafer Thin film deposition method for wafer

C - Chemistry, Metallurgy

23

C

C23C 16/04 (2006.01) C23C 16/24 (2006.01) C23C 16/44 (2006.01) C30B 25/02 (2006.01) C30B 25/18 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2051529

A thin film deposition method involves placement of a wafer or substrate having a surface containing at least two types of materials inside a vacuum chamber or vessel and introducing a reactant gas into the vacuum chamber or vessel. The reactant gas contain molecules that have a low adhesive coefficient relative to at least one of the at least two types of materials. This allows epitaxial growth to occur on the other type of materials contained in the wafer or substrate. The method further includes setting the pressure inside the vacuum chamber or vessel filled with the reactant gas equal to a pressure range in which the mean free path (d) of the reactant gas molecules is longer than the shortest distance (L) between the wafer or substrate placed inside the vacuum chamber or vessel and the vacuum side-exposed wall of the vacuum chamber or vessel, such that d > L. The method further includes cessation of the reactant gas into the vacuum chamber or vessel until the total amount of the reactant gas introduced into the vacuum chamber or vessel reaches a level at which a thin film can be deposited onto the surface containing the material having the low adhesive coefficient relative to the reactant gas.

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