H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 21/84 (2006.01) H01L 21/34 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01)
Patent
CA 1308495
Abstract A method of manufacture of thin film, field-effect transistors formed on a transparent substrate and with transparent, conductive source and drain electrodes, uses initially deposited gate electrodes as a mask in association with photolithographic processing using radiation transmitted through the substrate and electrodes to minimise parasitic capacitance between the gate and source and drain electrodes.
576741
Judge Charles Philip
Lee Michael John
Wright Stephen Whitney
British Technology Group Limited
Fetherstonhaugh & Co.
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