H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 21/02 (2006.01) H01L 21/027 (2006.01) H01L 21/336 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01)
Patent
CA 1200325
ABSTRACT OF THE DISCLOSURE The present invention provides a thin film transistor comprising a glass substrate; a gate electrode which is formed on the glass substrate; source and drain electrodes self-aligned with the gate electrode; an insulating film which covers at least the gate electrode; and an amorphous semiconductor layer which is formed on the insulating film and which comprises a first portion having the source electrode thereon, a second portion having the drain electrode thereon, and a third portion between the first and second portions, the layer being located above the gate electrode and having a thin thickness which allows the permeation of photolithographic light therethrough. The invention overcomes difficulties in precisely aligning the gate r source and drain electrodes and provides a thin film transistor wherein the source and drain electrodes are self-aligned with the gate electrode. The thin film transistors are useful as a driving element of liquid crystal display devices.
424658
Kawai Satoru
Kodama Toshirou
Nasu Yasuhiro
Takagi Nobuyoshi
Yanagisawa Shintaro
Fujitsu Limited
Mcfadden Fincham
LandOfFree
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