Thin film formation process

H - Electricity – 01 – L

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H01L 21/02 (2006.01) H01L 21/20 (2006.01) H01L 49/02 (2006.01)

Patent

CA 2233028

A process for thin film formation is provided which comprises a step of separation of a substrate constituted of a nonporous Si layer, a porous Si layer formed thereon, and a less porous Si layer formed further thereon into the nonporous Si layer and the less porous Si layer at the porous Si layer, wherein the separation is caused by projecting a laser beam through the side face of the substrate. From the separated substrate, an SOI substrate is prepared, and the non porous Si layer is recycled to the SOI substrate production process. This SOI substrate production process saves the consumption of the material and lowers the production cost. The substrates are separated definitely. A process for producing a photoelectric transducing apparatus such as solar cells with material saving and low cost is also provided in which the porous layer is separated definitely without strong adhesion between the substrate and a jig.

Procédé de formation d'une couche mince. Le procédé consiste à séparer un substrat constitué d'une couche Si non poreuse, d'une couche Si poreuse formée sur celle-ci, d'une couche Si moins poreuse qui s'ajoute en outre sur la couche Si non poreuse et la couche Si moins poreuse au niveau de la couche Si poreuse où la séparation est obtenue en projetant un faisceau laser à travers le coté latéral du substrat. € partir du substrat séparé, on prépare un substrat SOI (semiconducteur sur un isolant) et la couche Si non poreuse est recyclée en vue de reprendre le processus de production d'un substrat SOI. Ce dernier processus permet de réduire la quantité de matériel utilisé et d'abaisser les coûts de production. Les substrats sont séparés définitivement. L'invention décrit également un processus de production d'un appareil de transduction photoélectrique comme des cellules solaires et précise les économies de coûts et de matériel qu'il est possible de réaliser. La couche poreuse est séparée définitivement sans qu'il y ait une forte adhérence entre le substrat et un support.

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