Thin film metallization and brazing of aluminum nitride

B - Operations – Transporting – 32 – B

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B32B 15/04 (2006.01) C04B 37/02 (2006.01) C04B 41/52 (2006.01) C04B 41/88 (2006.01) C04B 41/89 (2006.01) H05K 3/32 (2006.01) B23K 35/30 (2006.01) H05K 1/03 (2006.01) H05K 3/38 (2006.01)

Patent

CA 2134340

2134340 9323246 PCTABS00028 The aluminum nitride metallized structure (10) of the present invention includes a substrate (11) comprising an AlN sintered body and a metallized structure (21) formed on the substrate comprising a first layer (12) deposited on the sintered body and a second (B) layer deposited on the first layer (12). The first layer (12) comprises an alloy having the general formula (a) based on atomic percent: XxZ100-x wherein X is at least one member selected from the group consisting of Ti, Zr, Hf and the rare earth elements, Z is at least one member selected from the group consisting of Mo, W, Cr, Nb, V and Ta, and 10 < x < 60 atomic %. The second layer (13) comprises at least one member selected from the group consisting of Au, Co, Cu, Ni, and Fe.

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