Thin film mos transistor having pair of gate electrodes...

Details Thin film mos transistor having pair of gate electrodes... Thin film mos transistor having pair of gate electrodes...

H - Electricity

01

L

356/149

H01L 29/78 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1315421

ABSTRACT OF THE DISCLOSURE A thin film MOS transistor has a construction which can minimize scattering of electrons and thus maximize electron mobility for allowing higher speed operation of the transistor. Toward this, the MOS transistor has a thin film form semiconductor layer having a thickness in a range less than or equal to 100 nm, between a pair of gate electrodes which oppose to each other across the semiconductor layer.

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