C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/06 (2006.01) C30B 29/38 (2006.01)
Patent
CA 2688453
Disclosed are a thin film of AlN, which is flat and thin, and a process for producing the thin film of AlN. An AlN thin film (2) contains not less than 0.001% by weight and not more than 10% by weight of one or more additive elements selected from group III elements, group IV elements, and group V elements. The AlN thin film (2) can be formed on a base material (1) using plasma generated by setting an AlN sintered compact containing not less than 0.001% by weight and not more than 10% by weight of one or more additive elements selected from group III elements, group IV elements, and group V elements in a vacuum chamber and irradiating the AlN sintered compact with a laser beam in such a state that the base material (1) has been set in the vacuum chamber.
L'invention concerne un film mince d'AlN, qui est plat et mince, et un procédé de production du film mince d'AlN. Un film mince d'AlN (2) contient au moins 0,001 % en poids et au plus 10 % en poids d'un ou de plusieurs éléments additifs choisis parmi des éléments du groupe III, des éléments du groupe IV, et des éléments du groupe V. Le film mince d'AlN (2) peut être formé sur un matériau de base (1) en utilisant du plasma généré en plaçant un AlN fritté compact contenant au moins 0,001 % en poids et au plus 10 % en poids d'un ou de plusieurs éléments additifs choisis parmi des éléments du groupe III, des éléments du groupe IV et des éléments du groupe V, dans une chambre sous vide et en irradiant l'AlN fritté compact avec un faisceau laser dans un état tel que le matériau de base (1) a été placé dans la chambre sous vide.
Miyanaga Michimasa
Mizuhara Naho
Nakahata Hideaki
Sakurada Takashi
Satoh Issei
Marks & Clerk
Sumitomo Electric Industries Inc.
Sumitomo Electric Industries Ltd.
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