Thin film oxygen sensor

Details Thin film oxygen sensor Thin film oxygen sensor

G - Physics

01

N

G01N 21/59 (2006.01) G01N 5/02 (2006.01) G01N 27/12 (2006.01) G01N 27/409 (2006.01)

Patent

CA 2105951

An oxygen sensor is based on a thin film of a compound oxide supported on a substrate such as quartz. The compound oxide has a general formula ABO2.5+x, where A is an element of the lanthanum family, alkaline earth metal or their mixture, and B is a transition metal or a mixture of transition metals. X is a variable number, changing from about 0 to about 0.5 between the reversible oxygen-deplete and oxygen-rich forms of the oxide. In an elevated temperature and oxygen-containing atmosphere, the thin film can undergo reversible bulk oxidation resulting in a detectable change of its physical properties such as mass, optical transmissivity and electrical resistance.

Affiliated with

Also associated with

Rating

Thin film oxygen sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film oxygen sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film oxygen sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2075099