Thin film piezoelectric element, method for manufacturing...

H - Electricity – 03 – H

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H03H 9/64 (2006.01) H01L 41/107 (2006.01) H03H 3/04 (2006.01) H03H 9/17 (2006.01)

Patent

CA 2259034

Thin film piezoelectric elements (12a, 12b, and 12c) formed on a wafer (11) and having the same characteristics irrespective of the position on the wafer (11) is realized by compensating the variation of the characteristics depending on the positions of the elements (12a, 12b, and 12c) by changing at least one of the lengths Le and widths We of upper electrodes (18a and 18b), the distance Lg between upper input and output electrodes (18a and 18b), the lengths La and widths Wa of lead-out electrodes (19a and 19b), and the pattern shapes of the elements (12a, 12b, and 12c), such as the electrode areas of the capacitors electrically connected to bonding pads (20a and 20b).

Eléments piézo-électriques (12a, 12b et 12c) à couche mince formés sur une plaquette (11) et présentant des caractéristiques constantes indépendantes de leur position sur la plaquette (11). Ces éléments sont réalisés par compensation de la variation des caractéristiques liée aux positions des éléments (12a, 12b et 12c) et modification d'au moins un des paramètres suivants: longueur (Le) et largeur (We) des électrodes supérieures (18a et 18b), distance (Lg) entre l'électrode d'entrée et l'électrode de sortie supérieures (18a et 18b), longueur (La) et largeur (Wa) des électrodes de sortie (19a et 19b), et formes des éléments (12a, 12b et 12c), par exemple les zones électrodes des condensateurs reliés électriquement aux plages de connexion (20a et 20b).

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