Thin film pyroelectric imaging array

Details Thin film pyroelectric imaging array Thin film pyroelectric imaging array

G - Physics

01

J

G01J 5/34 (2006.01) H01L 27/146 (2006.01) H01L 27/16 (2006.01) H01L 31/0264 (2006.01) H01L 37/02 (2006.01)

Patent

CA 2118597

A thin film pyroelectric imaging array (N, M) fabricated as a Si wafer. A thin film (40) of PbTiO3 is deposited on a ther- mally isolated bridge (45). The bridge (45) suspends the PbTiO3 sensor (40) over a preferentially etched cavity (70) in the Si wafer (10). Improved thermal isolation increases the responsivity of the sensor (33) to incident radiation. The pyroelectric sensor (33) formed can operate effectively at room temperature.

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