Thin film resistor for integrated circuit semiconductor device

Details Thin film resistor for integrated circuit semiconductor device Thin film resistor for integrated circuit semiconductor device

H - Electricity

01

C

356/121, 338/21,

H01C 7/00 (2006.01) H01C 17/12 (2006.01) H01L 21/02 (2006.01) H01L 27/06 (2006.01) H01L 27/11 (2006.01)

Patent

CA 1225445

ABSTRACT A thin film resistor used in microelectronic devices having a resistive layer comprising silicon nitride (Si3N4) and refractory metals of tungsten and/or molybdenum. The features of the structure of the resistor is that the film comprises silicon nitride layer and grains of metal and/or metal silicide, wherein the resistivity mainly determined by the silicon nitride contained. Therefore, the total resistance of the resistor can be controlled by the amount of the silicon nitride providing a wide range of the resistivity of 10-3 to 109 .OMEGA.cm. Other characteristics such as immunity to the dopants contained in adjacent doped layer, namely a heat resistivity and a low activation energy of the resistivity are verified by associated experiments.

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