Thin film strain sensors based on interferometric optical...

G - Physics – 01 – B

Patent

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G01B 9/02 (2006.01) G01L 1/24 (2006.01)

Patent

CA 2341166

The invention relates to polymeric/semiconductor thin film strain gauges comprising visible light from spectrometer (10) which is directed onto a thin film passive sensor (12) having a transparent glass substrate (14) and a laminated construction in succession from the substrate (14), of a polyimide layer (18a), a polysiloxane layer (16a) filled with alumina particles, a polyimide layer (18b) and a polysiloxane layer (16b) filled with alumina particles.

L'invention a trait à des jauges de contrainte à film mince polymères/semi-conductrices. De la lumière visible provenant d'un spectromètre (10) est dirigée sur un capteur (12) passif à film mince comportant un substrat (14) de verre transparent et une construction stratifiée qui présente successivement à partir du substrat (14) une couche (18a) de polyimide, une couche (16a) de polysiloxane remplie de particules d'alumine, une couche (18b) de polyimide et une couche (16b) de polysiloxane remplie de particules d'alumine.

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